IPP120N10S4-05 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPP120N10S4-05
- Power Dissipation (Pd): 190W
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 120A
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@120uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.3mΩ@10V,100A
- Package: TO-220
- Manufacturer: Infineon Technologies
